| PART |
Description |
Maker |
| MPS2222RLRPG MPS2222AG MPS2222ARLG MPS2222ARLRAG M |
General Purpose Transistors
Small Signal General Purpose NPN; Package: TO-92 (TO-226) 5.33mm Body Height; No of Pins: 3; Container: Tape and Ammunition Box; Qty per Container: 2000 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
General Purpose Transistors
|
ON Semiconductor
|
| 2N4403ZL1 2N4403RLRP 2N4403RLRM 2N4403RL 2N4403RLR |
General Purpose Transistors 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
General Purpose Transistors, PNP Silicon
|
ON Semiconductor
|
| EC30AL42464 EC30AL301.87 EC30AL301.82 EC30AL3518.2 |
1 ELEMENT, 464000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1870 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1820 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 18200 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 20000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 22600 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 26100 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 4020 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 4420 uH, GENERAL PURPOSE INDUCTOR
|
|
| BCX54 BCX55 BCX55-16 BCX55-10 |
NPN Silicon AF Transistors(NPN硅放大器晶体
General Purpose Transistors - SOT89; VCEO=60 V; hFE=40...250
General Purpose Transistors - SOT89; VCEO=45V; hFE 40..250
|
SIEMENS AG
Infineon
|
| NTE2404N NTE2404NPN NTE2404 NTE2405 |
300 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Silicon Complementary Transistors Darlington / General Purpose
Silicon Complementary Transistors Darlington, General Purpose
|
NTE[NTE Electronics]
|
| BC847BPDW1T1 BC847CPDW1T1 BC848BPDW1T1 BC846BPDW1T |
Dual General Purpose Amplifier Transistors (NPN PNP)(-45V通用型双放大器晶体管(NPN PNP，SOT-363封装)) 100 mA, 45 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
From old datasheet system
Dual General Purpose Transistors(NPN/PNP Duals)
|
ON Semiconductor
|
| JC557 JC556_557_558_3 JC556 JC556B JC557B JC558 JC |
PNP general purpose transistors
From old datasheet system
PNP general purpose transistor(PNP通用型晶体管)
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| AISC-0805L AISC-0805 AISC-0805F AISC-0805FL AISC-0 |
1 ELEMENT, 0.75 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.015 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
SURFACE-MOUNT WIRE-WOUND CHIP INDUCTORS
1 ELEMENT, 0.62 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.68 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.27 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 1 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.012 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.082 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 1.2 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.47 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.033 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 1.5 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.15 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.47 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.0056 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.0033 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.68 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.91 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.91 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.0082 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.39 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
ABRACON[Abracon Corporation]
|
| 2SB1694 |
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
General purpose amplification (-30V, -1A)
General purpose amplification (−30V −1A)
|
ROHM[Rohm]
|
| MSC82306 2765 |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS 射频
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
From old datasheet system
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
|
